On the performance limits of emerging nano-MOS transistors: A simulation study

Performance limits of n-channel MOSFETs are examined based on a quantum-corrected Monte Carlo simulation. We considered technology boosters such as ballistic transport, high mobility channel materials and three dimensional (3D) device architectures, and then investigated their quantitative advantages on device performance. As a result, we found that the quasi-ballistic transport is promising to improve a drive current in Si-MOSFETs. We also found that group III-V materials and Ge are expected to perform better than the Si devices, but to maximize the device performance of III-V MOSFETs, a lower resistive source and drain such as metal source/drain and also ultrathin body technique will be indispensable. Further, we proposed and developed a "fractional particle method" for 3D quantum-corrected Monte Carlo simulation, and also demonstrated that lateral quantum confinement becomes important in nanoscale 3D MOSFETs.