DocumentCode
2605319
Title
A Comprehensive Atomic Study of Carbon Nanotube Schottky Diode Using First Principles Approach
Author
Bai, Ping ; Lam, Kai Tak ; Li, Erping ; Chang, Ken Kai-fu
Author_Institution
Inst. of High Performance Comput., Singapore
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
749
Lastpage
752
Abstract
In this paper, Carbon nanotube (CNT) Schottky diodes are investigated from the atomic perspective using the first principles DFT-NEGF method. Two atomic models are built based on experimental setting. The atomic behaviors of the CNT Schottky diodes are explored through density of states and charge transfer of the atomic models. The electron transport properties of the CNT diodes are analyzed through transmission function, energy gap shifting and I-V characteristics.
Keywords
Schottky diodes; carbon nanotubes; charge exchange; DFT-NEGF method; I-V characteristics; atomic models; carbon nanotube Schottky diode; charge transfer; comprehensive atomic study; energy gap shifting; Atomic layer deposition; Carbon nanotubes; Charge transfer; Electrodes; Electrons; Geometry; Nanoelectronics; Schottky barriers; Schottky diodes; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4419055
Filename
4419055
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