Title :
Tunnel Injection into Gate Oxide Traps
Author :
Maserjian, J. ; Kaw, R. ; Collier, J.
Author_Institution :
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91103
Abstract :
An experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co60 irradiation. The results are related to long-term drift of threshold voltage.
Keywords :
Density measurement; Electrodes; Energy measurement; Frequency measurement; Laboratories; MOSFETs; Propulsion; Silicon; Tunneling; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1975. 13th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1975.362672
