Title :
SOS Island Edge Profiles Following Oxidation
Author :
Lee, S.N. ; Kjar, R.A.
Author_Institution :
Rockwell International Corporation, 3370 Miraloma Avenue, Anaheim, California 92803
Abstract :
A study of silicon and oxide profiles at the edges of silicon islands etched in silicon-on-sapphire (SOS) has shown that, following thermal oxidation of the silicon, a " V"- shaped groove forms between the silicon dioxide grown on the island edge and the sapphire substrate. This groove can cause etching and metal coverage anomalies at the island edges resulting in poor circuit yield and reliability.
Keywords :
Anisotropic magnetoresistance; Etching; Integrated circuit reliability; Integrated circuit yield; Nose; Oxidation; Protection; Semiconductor epitaxial layers; Silicon compounds; Substrates;
Conference_Titel :
Reliability Physics Symposium, 1975. 13th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1975.362673
