Performance Comparison of Graphene Nanoribbon Schottky Barrier and MOS FETs

Graphene nanoribbon (GNR) Schottky barrier (SB) FETs and MOSFETs are studied using self-consistent atomistic simulations. MOSFETs show 30-70% performance improvement in terms of larger on current, larger maximum achievable on-off current ratio, larger cutoff frequency, smaller intrinsic delay and better saturation behavior for ideal structures. Disorders, such as lattice vacancies, edge roughness, and ionized impurities, have a significant impact on device performance and variability, due to strong sensitivity to electrostatic environment and channel atomistic structure.