Title :
Simulation Investigation of Double-Gate CNR-MOSFETs with a Fully Self-Consistent NEGF and TB Method
Author :
Guan, Ximeng ; Zhang, Ming ; Liu, Qiang ; Yu, Zhiping
Author_Institution :
Tsinghua Univ. Beijing, Beijing
Abstract :
Carbon nanoribbon (CNR) double-gate (DG) MOSFETs are simulated using fully self-consistent non-equilibrium Green´s function (NEGF) approach and tight-binding method (TB). Transfer and output characteristics, as well as subthreshold slope for various channel length and width are reported. DIBL and SCE effects are quantitatively evaluated and approaches to improving gate controllability are discussed.
Keywords :
Green´s function methods; MOSFET; carbon; nanostructured materials; semiconductor device models; C; double-gate carbon nanoribbon-MOSFET; gate controllability; self-consistent nonequilibrium Green´s function; subthreshold slope; tight-binding method; transfer characteristics; Charge carrier processes; Controllability; Dielectric materials; Doping; Electron mobility; Green´s function methods; MOSFETs; Microelectronics; Poisson equations; Scattering;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419058
