DocumentCode
2605372
Title
Simulation Investigation of Double-Gate CNR-MOSFETs with a Fully Self-Consistent NEGF and TB Method
Author
Guan, Ximeng ; Zhang, Ming ; Liu, Qiang ; Yu, Zhiping
Author_Institution
Tsinghua Univ. Beijing, Beijing
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
761
Lastpage
764
Abstract
Carbon nanoribbon (CNR) double-gate (DG) MOSFETs are simulated using fully self-consistent non-equilibrium Green´s function (NEGF) approach and tight-binding method (TB). Transfer and output characteristics, as well as subthreshold slope for various channel length and width are reported. DIBL and SCE effects are quantitatively evaluated and approaches to improving gate controllability are discussed.
Keywords
Green´s function methods; MOSFET; carbon; nanostructured materials; semiconductor device models; C; double-gate carbon nanoribbon-MOSFET; gate controllability; self-consistent nonequilibrium Green´s function; subthreshold slope; tight-binding method; transfer characteristics; Charge carrier processes; Controllability; Dielectric materials; Doping; Electron mobility; Green´s function methods; MOSFETs; Microelectronics; Poisson equations; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4419058
Filename
4419058
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