DocumentCode :
2605477
Title :
Fast switching and long retention Fe-O ReRAM and its switching mechanism
Author :
Muraoka, S. ; Osano, K. ; Kanzawa, Y. ; Mitani, S. ; Fujii, S. ; Katayama, K. ; Katoh, Y. ; Wei, Z. ; Mikawa, T. ; Arita, K. ; Kawashima, Y. ; Azuma, R. ; Kawai, K. ; Shimakawa, K. ; Odagawa, A. ; Takagi, T.
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
779
Lastpage :
782
Abstract :
A novel iron oxide (Fe-O) ReRAM is proposed and its high-speed resistance-switching of 10 ns is demonstrated. The switching mechanism is confirmed as a redox reaction between Fe3O4 and y-Fe2O3. Based on this model, we have achieved long-retention characteristics by introducing Zn atoms to suppress the reduction process.
Keywords :
circuit switching; high-speed techniques; iron compounds; oxidation; random-access storage; reduction (chemical); zinc; FeO; high-speed resistance-switching; iron oxide ReRAM; long-retention characteristics; redox reaction; reduction process; resistive memory; time 10 ns; Annealing; Anodes; Cities and towns; Crystalline materials; Electrodes; Infrared spectra; Iron; Region 1; Temperature; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4419063
Filename :
4419063
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2605477
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