• DocumentCode
    2605548
  • Title

    CMOS and Interconnect Reliability - Negative Bias Temperature Instability

  • Author

    Bersuker, Gennadi ; Suehle, John

  • Author_Institution
    SEMATECH
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    795
  • Lastpage
    795
  • Keywords
    Degradation; Dielectrics; NIST; Negative bias temperature instability; Niobium compounds; Predictive models; Random access memory; Testing; Threshold voltage; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4419067
  • Filename
    4419067
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2605548