DocumentCode
2605566
Title
New characterization and modeling approach for NBTI degradation from transistor to product level
Author
Huard, V. ; Parthasarathy, C. ; Rallet, N. ; Guerin, C. ; Mammase, M. ; Barge, D. ; Ouvrard, C.
Author_Institution
STMicroelectronics, Crolles
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
797
Lastpage
800
Abstract
From extensive set of silicon data presented in this study, we report a new way of understanding and modeling various aspects of NBTI degradation from transistor to product level. This work opens new paths for both relevant process improvements and product optimization.
Keywords
elemental semiconductors; hole traps; interface states; semiconductor device models; silicon; thermal stability; thermal stresses; transistors; NBTI degradation modeling; Si; hole trapping; interface traps creation; product optimization; reaction-limited model; silicon data; transistor-to-product level; Condition monitoring; Degradation; Dielectrics; Niobium compounds; Predictive models; Silicon; Stress; Temperature dependence; Titanium compounds; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4419068
Filename
4419068
Link To Document