• DocumentCode
    2605590
  • Title

    Theory and Practice of On-the-fly and Ultra-fast VT Measurements for NBTI Degradation: Challenges and Opportunities

  • Author

    Islam, A.E. ; Kumar, E.N. ; Das, H. ; Purawat, S. ; Maheta, V. ; Aono, H. ; Murakami, E. ; Mahapatra, S. ; Alam, M.A.

  • Author_Institution
    Purdue Univ., Lafayette
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    805
  • Lastpage
    808
  • Abstract
    On-the-fly and ultra-fast VT are popular characterization techniques for analyzing NBTI degradation. We show that these techniques do not probe the intrinsic NBTI degradation directly and hence require suitable correction. The ´corrected´ data allows us to explore the subtlety of relaxation dynamics by various measurements and suggest a theoretical basis for log-t relaxation consistent within R-D framework.
  • Keywords
    semiconductor device measurement; thermal stability; voltage measurement; NBTI degradation; R-D framework; log-t relaxation; negative bias temperature instability; on-the-fly measurement; relaxation dynamics; ultra-fast VT measurement; Contamination; Degradation; Delay effects; Delay estimation; Electron traps; Niobium compounds; Pollution measurement; Probes; Stress; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4419070
  • Filename
    4419070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2605590