Title :
Theory and Practice of On-the-fly and Ultra-fast VT Measurements for NBTI Degradation: Challenges and Opportunities
Author :
Islam, A.E. ; Kumar, E.N. ; Das, H. ; Purawat, S. ; Maheta, V. ; Aono, H. ; Murakami, E. ; Mahapatra, S. ; Alam, M.A.
Author_Institution :
Purdue Univ., Lafayette
Abstract :
On-the-fly and ultra-fast VT are popular characterization techniques for analyzing NBTI degradation. We show that these techniques do not probe the intrinsic NBTI degradation directly and hence require suitable correction. The ´corrected´ data allows us to explore the subtlety of relaxation dynamics by various measurements and suggest a theoretical basis for log-t relaxation consistent within R-D framework.
Keywords :
semiconductor device measurement; thermal stability; voltage measurement; NBTI degradation; R-D framework; log-t relaxation; negative bias temperature instability; on-the-fly measurement; relaxation dynamics; ultra-fast VT measurement; Contamination; Degradation; Delay effects; Delay estimation; Electron traps; Niobium compounds; Pollution measurement; Probes; Stress; Titanium compounds;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419070
