DocumentCode :
2605705
Title :
Three technologies for a smart miniaturized gas-sensor: SOI CMOS, micromachining, and CNTs - challenges and performance
Author :
Udrea, F. ; Maeng, S. ; Gardner, J.W. ; Park, J. ; Haque, M.S. ; Ali, S.Z. ; Choi, Y. ; Guha, P.K. ; Vieira, S.M.C. ; Kim, H.Y. ; Kim, S.H. ; Kim, K.C. ; Moon, S.E. ; Park, K.H. ; Milne, W.I. ; Oh, S.Y.
Author_Institution :
Univ. of Cambridge, Cambridge
fYear :
2007
fDate :
10-12 Dec. 2007
Firstpage :
831
Lastpage :
834
Abstract :
In this paper we propose a new type of solid-state gas sensor by combining three recent advances, namely silicon-on-insulator CMOS technology, through wafer etching and growth of gas-sensitive carbon nanotubes. We have developed novel tungsten-based CMOS micro-hotplates that offer ultra low power consumption (less than 10 mW at 250degC), on-chip CNT deposition at temperatures up to 700degC, and full integration of CMOS circuitry. Moreover, the tungsten micro-hotplates possess better stability than other CMOS materials such as polysilicon. The multi-walled CNT resistive gas sensors showed a good response to PPB levels of NO2 in air but required additional heating to provide reasonable baseline recovery times. We believe that our approach is attractive for the mass production of low-cost, low-power gas sensors in silicon foundries.
Keywords :
CMOS integrated circuits; carbon nanotubes; etching; gas sensors; intelligent sensors; micromachining; microsensors; nanotube devices; silicon-on-insulator; tungsten; C; NO2; Si; W; gas-sensitive carbon nanotube growth; mass production; micromachining; multiwalled CNT resistive gas sensors; silicon foundries; silicon-on-insulator CMOS technology; smart miniaturized gas sensor; through wafer etching; tungsten-based CMOS micro-hotplates; ultra low power consumption; CMOS technology; Carbon nanotubes; Energy consumption; Etching; Gas detectors; Micromachining; Silicon on insulator technology; Solid state circuits; Temperature sensors; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
Type :
conf
DOI :
10.1109/IEDM.2007.4419077
Filename :
4419077
Link To Document :
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