DocumentCode
2605721
Title
Future devices for information processing
Author
Cavin, Ralph K. ; Zhirnov, Victor V.
Author_Institution
Semicond. Res. Corp., Research Triangle Park, NC, USA
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
7
Lastpage
12
Abstract
Current CMOS devices operate at about six orders of magnitude above the kBTln2 Joules/bit switching limit imposed by physics. Nevertheless, it can be shown that continued scaling of device features that are then densely packed and operated at attainable frequencies will result in the generation of thermal loads that cannot be managed by any known heat removal technology. We discuss possible successor/complementary logic devices that reduce the level of heat generation and we discuss new nonvolatile memory techniques that could radically impact information processing architectures and hence the performance requirements for logic devices.
Keywords
CMOS logic circuits; semiconductor storage; CMOS devices; complementary logic devices; device feature scaling; heat generation level reduction; information processing; nonvolatile memory technique; thermal loads; CMOS technology; Electrons; Energy barrier; Equations; Information processing; Logic devices; Physics; Thermal management; Tunneling; Uncertainty;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1545743
Filename
1545743
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