8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

Author

Uemoto, Yasuhiro ; Shibata, Daisuke ; Yanagihara, Manabu ; Ishida, Hidetoshi ; Matsuo, Hisayoshi ; Nagai, Shuichi ; Batta, Nagaraj ; Li, Ming ; Ueda, Tetsuzo ; Tanaka, Tsuyoshi ; Ueda, Daisuke

Author_Institution

Matsushita Electr.-Panasonic, Kyoto

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

861

Lastpage

864

Abstract

We report ultra high voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire with thick poly-AlN passivation. Extremely high blocking voltage of 8300 V is achieved while maintaining relative low specific on-state resistance (Ron*A) of 186 mOmegaldrcm². Via-holes through sapphire at the drain electrodes enable very efficient layout of the lateral HFET array as well as better heat dissipation.

Keywords

III-V semiconductors; aluminium compounds; electric resistance; gallium compounds; junction gate field effect transistors; passivation; power HEMT; sapphire; semiconductor device breakdown; semiconductor epitaxial layers; wide band gap semiconductors; Al₂O₃; AlGaN-GaN-AlN; blocking voltage; breakdown voltages; drain electrodes; heat dissipation; lateral HFET array; on-state resistance; power HFET; thick poly-crystalline aluminium nitride passivation; ultra high voltage heterojunction transistors; voltage 8300 V; Aluminum gallium nitride; Breakdown voltage; Electric breakdown; Gallium nitride; HEMTs; MODFETs; Passivation; Silicon compounds; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419085

Filename

4419085