DocumentCode
2605867
Title
Current Collapseless High-Voltage GaN-HEMT and its 50-W Boost Converter Operation
Author
Saito, Wataru ; Kuraguchi, Masahiko ; Takada, Yoshiharu ; Tsuda, Kunio ; Saito, Yasunobu ; Omura, Ichiro ; Yamaguchi, Masakazu
Author_Institution
Toshiba Corp., Kawasaki
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
869
Lastpage
872
Abstract
Suppression of the on-resistance modulation caused by the current collapse phenomena in the high-voltage GaN-HEMT was successful by using dual-field plate (FP) structure and back-side FP. A 480-V/2A GaN-HEMT was designed and fabricated for power electronic applications. In this device, the on-resistance modulation was negligible as low as 5% even under an applied voltage of 300 V. Boost converter circuit was demonstrated using the fabricated device with an output power of 54 W, high power efficiency of 92.7% and high switching frequency of 1 MHz.
Keywords
gallium compounds; high electron mobility transistors; power convertors; power electronics; HEMT; boost converter; dual-field plate structure; high electron mobility transistors; power electronic applications; Acceleration; Aluminum gallium nitride; Circuits; Electrons; Fabrication; Gallium nitride; Passivation; Power electronics; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4419087
Filename
4419087
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