High-performance p-channel diamond MOSFETs with alumina gate insulator

Author

Hirama, Kazuyuki ; Takayanagi, Hidenori ; Yamauchi, Shintaro ; Jingu, Yoshikatsu ; Umezawa, Hitoshi ; Kawarada, Hiroshi

Author_Institution

Waseda Univ., Tokyo

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

873

Lastpage

876

Abstract

We evaluated diamond metal oxide semiconductor field effect transistors (MOSFETs) on (001) homoepitaxial and (110) preferentially oriented large-grain diamond films with an Al₂O₃ gate insulator and demonstrated their improved DC and RF characteristics (I_DS = -790 mA/mm and f_T = 45 GHz, which are the highest values for diamond FETs). Channel mobility evaluation and load-pull measurement were carried out for the first time for diamond MOSFETs. Even on a large-grain diamond substrate, a high channel mobility of 120 cm²/Vs was obtained. This is comparable to that of a SiC inversion layer. A power density of 2.14 W/mm was obtained at 1 GHz. This power density exceeded those of Si LDMOSFETs and GaAs FETs.

Keywords

MOSFET; aluminium compounds; diamond; electron mobility; oxygen compounds; Al₂O₃; alumina gate insulator; channel mobility evaluation; diamond metal oxide semiconductor field effect transistors; frequency 1 GHz; frequency 45 GHz; load-pull measurement; preferentially oriented large-grain diamond films; FETs; Gallium arsenide; Insulation; MOSFETs; Metal-insulator structures; Radio frequency; Semiconductor films; Silicon carbide; Substrates; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419088

Filename

4419088