• DocumentCode
    2606080
  • Title

    High Performance 60 nm Gate Length Germanium p-MOSFETs with Ni Germanide Metal Source/Drain

  • Author

    Yamamoto, Toyoji ; Yamashita, Yoshimi ; Harada, Masatomi ; Taoka, Noriyuki ; Ikeda, Keiji ; Suzuki, Kunihiro ; Kiso, Osamu ; Sugiyama, Naoharu ; Takagi, Shin-ichi

  • Author_Institution
    MIRAI-ASET, Ibaraki
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    1041
  • Lastpage
    1043
  • Abstract
    This paper demonstrates the successful fabrication of sub-100 nm Ge pMOSFETs with NiGe MSD and the high device performance, for the first time. It is also revealed that impurity profile engineering is still effective in controlling the electrical characteristics of short channel Ge MOSFET and that the concept of the universality for the inversion-layer mobility does hold even for Ge p-MOSFETs.
  • Keywords
    MOSFET; germanium; nickel compounds; Ge; NiGe; impurity profile engineering; inversion-layer mobility; metal source/drain; p-MOSFET fabrication; size 60 nm; Capacitance-voltage characteristics; Capacitors; Dielectrics; Electric resistance; Fabrication; Germanium; Impurities; MOSFET circuits; Passivation; Scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4419098
  • Filename
    4419098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2606080