• DocumentCode
    2606114
  • Title

    The Effect of Impurities on the Corrosion of Aluminum Metallization

  • Author

    Paulson, W.M. ; Lorigan, R.P.

  • Author_Institution
    Motorola Semiconductor Products Division, 5005 E. McDowell Road, Phoenix, ARizona 85008
  • fYear
    1976
  • fDate
    27851
  • Firstpage
    42
  • Lastpage
    47
  • Abstract
    Surface impurities are an important factor that affects the reliability of semiconductor devices exposed to THB environments. Aluminum metallized specimens were intentionally contaminated with controlled amounts of Na, K, and Cl. Corrosion was observed at both the anode and cathode following THB tests. The corrosion rate was proportional to the log of the impurity concentration. A model is proposed to explain the observed corrosion processes.
  • Keywords
    Aluminum; Anodes; Cathodes; Corrosion; Metallization; Semiconductor device reliability; Semiconductor devices; Semiconductor impurities; Surface contamination; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1976. 14th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1976.362720
  • Filename
    4208104