Title :
The Effect of Impurities on the Corrosion of Aluminum Metallization
Author :
Paulson, W.M. ; Lorigan, R.P.
Author_Institution :
Motorola Semiconductor Products Division, 5005 E. McDowell Road, Phoenix, ARizona 85008
Abstract :
Surface impurities are an important factor that affects the reliability of semiconductor devices exposed to THB environments. Aluminum metallized specimens were intentionally contaminated with controlled amounts of Na, K, and Cl. Corrosion was observed at both the anode and cathode following THB tests. The corrosion rate was proportional to the log of the impurity concentration. A model is proposed to explain the observed corrosion processes.
Keywords :
Aluminum; Anodes; Cathodes; Corrosion; Metallization; Semiconductor device reliability; Semiconductor devices; Semiconductor impurities; Surface contamination; Testing;
Conference_Titel :
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1976.362720
