DocumentCode
2606286
Title
Current Capabilities and Future Prospects of Atomistic Process Simulation
Author
Jaraiz, M. ; Castrillo, P. ; Pinacho, R. ; Rubio, J.E.
Author_Institution
Univ. of Valladolid, Valladolid
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
951
Lastpage
954
Abstract
Atomistic process simulators, based on the Kinetic Monte Carlo (KMC) scheme, are an attempt to fulfill some of the ITRS expectations for process modeling and simulation. We present a general overview of its conception and evolution up to its current state, show some of the latest developments, and discuss the possible trends in atomistic process simulation for the coming years.
Keywords
MOSFET; Monte Carlo methods; semiconductor process modelling; ITRS; atomistic process simulation; high-performance MOSFET devices; kinetic Monte Carlo scheme; process modeling; Atomic layer deposition; CMOS process; Fluctuations; Impurities; Kinetic theory; MOSFET circuits; Manufacturing processes; Monte Carlo methods; Predictive models; Simulated annealing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4419110
Filename
4419110
Link To Document