• DocumentCode
    2606327
  • Title

    Experimental and Theoretical Analysis of Dopant Diffusion and C Evolution in High-C Si:C Epi Layers: Optimization of Si:C Source and Drain Formed by Post-Epi Implant and Activation Anneal

  • Author

    Cho, Y. ; Zographos, N. ; Thirupapuliyur, S. ; Moroz, V.

  • Author_Institution
    Appl. Mater., Sunnyvale
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    959
  • Lastpage
    962
  • Abstract
    A comprehensive physics based calibrated model was developed to explain the observed n-type dopant diffusion and substitutional carbon (Csub) evolution in high C (>1%) Si:C epitaxial films. Both experimentally and theoretically, we demonstrated a viable doping scheme with near 100% Csub retention using undoped Si:C epi with post-epi implant and optimized anneal.
  • Keywords
    annealing; carbon; diffusion; field effect transistors; semiconductor device models; semiconductor doping; semiconductor epitaxial layers; silicon; Si:C; activation annealing; carbon evolution; dopant diffusion; epitaxial films; laser annealing; nFET device performance; post-epi implant; Annealing; Capacitive sensors; Doping; Epitaxial growth; Implants; Laser modes; Physics; Semiconductor process modeling; Stress; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4419112
  • Filename
    4419112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2606327