DocumentCode
2606384
Title
Fusing Mechanism of Nichrome Thin Films
Author
Davidson, J.L. ; Gibson, J.D. ; Harris, S.A. ; Rossiter, T.J.
Author_Institution
Harris Semiconductor, P. O. Box 883, Melbourne, Florida 32901
fYear
1976
fDate
27851
Firstpage
173
Lastpage
181
Abstract
(1) Conduction electrons in nichrome have a short mean-free path. This maximizes E2R heating and precludes electromigration in the direction of electron flow as a fusing mechanism. (2) Transmission electron microscopy is the only effective analytical tool to characterize the programmed fuse gap structure. (3) Nichrome fuses program by molten metal (nickel, chrome) ions moving in the presence of an electric field. The final structure resembles a frozen splash and is described by fluid dynamics. (4) Thermal analysis coupled with empirical programmed fuse data indicate a threshold power density for fusing. If this power density is exceeded, which can be assured if the programming time utilized is as specified, the fuse gap will be wide and reliable. If this power density threshold is only matched, it is possible to create a marginal fuse. (5) Life test results indicate programmed PROM reliability is equivalent to devices of the same complexity that do not utilize fusible links.
Keywords
Couplings; Electromigration; Fluid dynamics; Fuses; Life testing; Nickel; PROM; Resistance heating; Transistors; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1976.362738
Filename
4208122
Link To Document