• DocumentCode
    2606384
  • Title

    Fusing Mechanism of Nichrome Thin Films

  • Author

    Davidson, J.L. ; Gibson, J.D. ; Harris, S.A. ; Rossiter, T.J.

  • Author_Institution
    Harris Semiconductor, P. O. Box 883, Melbourne, Florida 32901
  • fYear
    1976
  • fDate
    27851
  • Firstpage
    173
  • Lastpage
    181
  • Abstract
    (1) Conduction electrons in nichrome have a short mean-free path. This maximizes E2R heating and precludes electromigration in the direction of electron flow as a fusing mechanism. (2) Transmission electron microscopy is the only effective analytical tool to characterize the programmed fuse gap structure. (3) Nichrome fuses program by molten metal (nickel, chrome) ions moving in the presence of an electric field. The final structure resembles a frozen splash and is described by fluid dynamics. (4) Thermal analysis coupled with empirical programmed fuse data indicate a threshold power density for fusing. If this power density is exceeded, which can be assured if the programming time utilized is as specified, the fuse gap will be wide and reliable. If this power density threshold is only matched, it is possible to create a marginal fuse. (5) Life test results indicate programmed PROM reliability is equivalent to devices of the same complexity that do not utilize fusible links.
  • Keywords
    Couplings; Electromigration; Fluid dynamics; Fuses; Life testing; Nickel; PROM; Resistance heating; Transistors; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1976. 14th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1976.362738
  • Filename
    4208122