• DocumentCode
    2606403
  • Title

    Bulk and interface band diagrams of advanced intermetal dielectrics

  • Author

    Guedj, C. ; Martinez, E. ; Licitra, C. ; Imbert, G. ; Barnes, J.P. ; Lafond, D. ; Toffoli, A. ; Arnal, V. ; Anaud, L.

  • Author_Institution
    CEA-LETI MINATEC, Grenoble
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    977
  • Lastpage
    980
  • Abstract
    Bulk and interface band diagrams are presented for porous ultra-low K SiCOH, dense SiCOH, TEOS and USG dielectrics, SiCON and SiCN etch stop layers, TaN and Ta2O5 barrier layers. These results may explain basic optical and electronic properties of advanced interconnects.
  • Keywords
    dielectric materials; semiconductor device reliability; advanced interconnects; advanced intermetal dielectrics; bulk band diagrams; electronic properties; interface band diagrams; optical properties; Chemicals; Copper; Current measurement; Dielectric materials; Dielectric measurements; Leakage current; Materials testing; Nondestructive testing; Photonic band gap; Strain measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4419117
  • Filename
    4419117
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2606403