DocumentCode
2606453
Title
FAMOS PROM Reliability Studies
Author
Gear, Gary
Author_Institution
Group Leader, Reliability Engineering, Intel Corporation, 3065 Bowers Avenue, Santa Clara, Calif. 95051, (408) 246-7501
fYear
1976
fDate
27851
Firstpage
198
Lastpage
201
Abstract
Since the introduction of the FAMOS PROM structure and its implementation in a 2048 bit P-Channel MOS PROM, few device reliability data have been available. This paper presents data taken on both the P-Channel 2048 bit FAMOS PROM and the 8192 bit N-Channel FAMOS PROM. The reliability studies undertaken fall into two categories, PROM retention tests and integrated circuit reliability tests. The combination of tests employed provide the basis for activation energy and failure rate calculations.
Keywords
Circuit testing; Electrons; Gears; Integrated circuit reliability; Integrated circuit testing; MOS devices; Nonvolatile memory; PROM; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1976.362742
Filename
4208126
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