• DocumentCode
    2606467
  • Title

    Electrically Shorted Semiconductor Junctions Utilized as Programmable Read Only Memory Elements

  • Author

    Brockhoff, W.R.

  • Author_Institution
    Intersil, Inc., 10900 N. Tantau Avenue, Cupertino, CA. 95014
  • fYear
    1976
  • fDate
    27851
  • Firstpage
    202
  • Lastpage
    206
  • Abstract
    Occasionally a problem becomes a solution. In search of a reliable element to use as the electrically alterable storage element in a programmable read only memory (PROM), the well-known failure mode of the shorted semiconductor junction was studied. Since a shorted junction is easily produced and remains shorted indefinitely, it can be applied as a reliable PROM storage element. This paper describes the programming technique and summarizes over four years of reliability characterizations performed on actual PROM devices produced using this technique.
  • Keywords
    Aluminum; Avalanche breakdown; Electric breakdown; Logic programming; Manufacturing; PROM; Programmable logic arrays; Semiconductor diodes; Temperature sensors; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1976. 14th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1976.362743
  • Filename
    4208127