Title :
Growth, Structural and Optical Properties of III-V Nanowires for Optoelectronic Applications
Author :
Joyce, Hannah J. ; Gao, Qiang ; Kim, Yong ; Tan, H. Hoe ; Jagadish, Chennupati
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Abstract :
We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of these nanowires. Binary and ternary nanowires of GaAs, InAs, InP, AlGaAs and InGaAs are achieved. We discuss the nucleation and growth issues involved in fabricating high quality nanowires suitable for device applications. We have fabricated and characterised a variety of axial and radial heterostructures including GaAs/InGaAs superlattices, and GaAs/AlGaAs core- shell and core-multishell nanowires.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; nanowires; nucleation; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wires; semiconductor superlattices; GaAs-AlGaAs; GaAs-InGaAs; III-V nanowire growth; InAs; InP; MOCVD; core-multishell nanowires; heterostructures; nucleation; optoelectronic applications; superlattices; Biomedical optical imaging; Gallium arsenide; Gold; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; MOCVD; Nanowires; Optical superlattices; Substrates; GaAs; InP; MOCVD; heterostructure; nanowire; photoluminescence;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601321
