Optical fiber doped with a nano-semiconductor layer of InP

In this article, a fiber with a nano-semiconductor layer locating between the Si-core and Si-cladding is fabricated. The improving technique called MCVD which is one of the important preparations of optical fiber is adopted. InP is chosen as the semiconductor and a fiber with a nano-layer is received, the thickness of which is only 10 nm. On the basis of this structure of the fiber, it is call as nano-semiconductor layer fiber (NSLF). Through calculating the change of forbidden bandwidth with the theory of quantum size effect testifies, we find out that this NSLF has the amplification. Finally, in the examination, a light with the wavelength of 532 nm injects in a section of 1 cm of NSLF, a good gain from the wavelength of 906 nm-1044 nm; 1080 nm-1491 nm; 1624 nm-1596 nm is received. Above all, we confidently believe this NSLF has a good amplification between some ranges of the wavelength.