DocumentCode
2606806
Title
Spin polarization of electron current in semimagnetic semiconductor nanostructures
Author
Beletskii, N.N. ; Borysenko, S.A.
Author_Institution
Usikov lnstitute of Radiophysics and Electronics of the National Academy of Sciences of Ukraine
fYear
2004
fDate
14-17 Sept. 2004
Firstpage
536
Lastpage
538
Abstract
The influence of an external constant magnetic field ou the voltage-current characteristics and spin polarization coeffrcient of the electron current in a double-harrier resonant-tunneling nanostructures composed of semimagnetic semiconductor layers has beeu investigated.
Keywords
Electrons; Magnetic fields; Magnetic resonance; Magnetic semiconductors; Magnetoelectronics; Polarization; Resonant tunneling devices; Semiconductor nanostructures; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Mathematical Methods in Electromagnetic Theory, 2004. 10th International Conference on
Conference_Location
Dniepropetrovsk, Ukraine
Print_ISBN
0-7803-8441-5
Type
conf
DOI
10.1109/MMET.2004.1397110
Filename
1397110
Link To Document