DocumentCode
2606807
Title
Hot Electron Reliability Effects in Lateral PNP Transistors
Author
Bergeron, D.L. ; Putney, Z.C. ; Smith, P.H. ; Stephens, G.B.
Author_Institution
IBM Corporation, Manassas, Virginia 22110. 703-367-2121
fYear
1977
fDate
28216
Firstpage
10
Lastpage
15
Abstract
A failure mechanism of bipolar lateral PNP transistors in medium voltage integrated circuits has been observed. The failure mechanism is characterized by inversion layer conduction between emitter and collector of the devices resulting from the trapping of hot electrons in the dielectric. A model of the mechanism has been developed which explains the observed temperature and voltage acceleration.
Keywords
Acceleration; Bipolar integrated circuits; Bipolar transistor circuits; Dielectric devices; Electron emission; Electron traps; Failure analysis; Integrated circuit reliability; Medium voltage; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1977. 15th Annual
Conference_Location
LAs Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1977.362765
Filename
4208152
Link To Document