Intersublevel relaxation properties of self-assembled InAs/GaAs quantum dot heterostructures

Author

Lee, Jiunn-Chyi ; Hu, Yeu-Jent ; Wu, Ya-Fen ; Nee, Tzer-En ; Wang, Jen-Cheng ; Fang, Jia-Hui

Author_Institution

Dept. of Electr. Eng., Technol. & Sci. Inst. of Northern Taiwan, Taipei

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

934

Lastpage

937

Abstract

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carrier relaxing and thermal emitting of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for samples with lower size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carrier relaxing process of quantum dot system is demonstrated by our model.

Keywords

III-V semiconductors; carrier lifetime; carrier relaxation time; gallium arsenide; indium compounds; photoluminescence; self-assembly; semiconductor quantum dots; InAs-GaAs; carrier dynamics; carrier transferring mechanisms; intersublevel relaxation lifetime; photoluminescence; quantum dot heterostructures; self assembly; Buffer layers; Equations; Gallium arsenide; Multilevel systems; Nanotechnology; Photoluminescence; Quantum dots; Self-assembly; Temperature dependence; Temperature measurement; Intersublevel Relaxation Lifetime; Quantum Dots; Rate Equations; Size Uniformity;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601337

Filename

4601337