DocumentCode
2606924
Title
Ion Microprobe Analysis of Integrated Circuit Structures
Author
Dobrott, R.D. ; Keenan, J.A. ; Larrabee, G.B.
Author_Institution
Texas Instruments Incorporated, P. O. Box 5936, M. S. 147, Dallas, Texas 75222. (214)238-3981
fYear
1977
fDate
28216
Firstpage
54
Lastpage
60
Abstract
The ion microprobe mass analyzer was used to determine the presence of both intentional and unintentional impurities in integrated circuit structures. The in-depth distribution of these impurities and their relative concentrations was determined by ion sputtering through the layers of the circuit. Analysis of areas where each layer has a matrix element change, e.g., SiO2 to silicon, was used to relate sputter time to layer interfaces. Impurities detected in dielectric films include carbon fluorine, zinc, tin, lead and barium, while resistors were observed to contain lead and tin.
Keywords
Barium; Chemical elements; Circuit analysis; Dielectric films; Impurities; Resistors; Silicon; Sputtering; Tin; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1977. 15th Annual
Conference_Location
LAs Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1977.362772
Filename
4208159
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