• DocumentCode
    2606924
  • Title

    Ion Microprobe Analysis of Integrated Circuit Structures

  • Author

    Dobrott, R.D. ; Keenan, J.A. ; Larrabee, G.B.

  • Author_Institution
    Texas Instruments Incorporated, P. O. Box 5936, M. S. 147, Dallas, Texas 75222. (214)238-3981
  • fYear
    1977
  • fDate
    28216
  • Firstpage
    54
  • Lastpage
    60
  • Abstract
    The ion microprobe mass analyzer was used to determine the presence of both intentional and unintentional impurities in integrated circuit structures. The in-depth distribution of these impurities and their relative concentrations was determined by ion sputtering through the layers of the circuit. Analysis of areas where each layer has a matrix element change, e.g., SiO2 to silicon, was used to relate sputter time to layer interfaces. Impurities detected in dielectric films include carbon fluorine, zinc, tin, lead and barium, while resistors were observed to contain lead and tin.
  • Keywords
    Barium; Chemical elements; Circuit analysis; Dielectric films; Impurities; Resistors; Silicon; Sputtering; Tin; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1977. 15th Annual
  • Conference_Location
    LAs Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1977.362772
  • Filename
    4208159