• DocumentCode
    2607044
  • Title

    Overlay metrology for next generation lithography at CMS

  • Author

    Ku, Y.S. ; Tai, H.M. ; Chang, Calvin C.

  • Author_Institution
    Center for Meas. Stand., Ind. Technol. Res. Inst., Hsinchu
  • fYear
    2007
  • fDate
    2-5 Aug. 2007
  • Firstpage
    998
  • Lastpage
    1001
  • Abstract
    The center for measurement standards (CMS) has a research program in optical overlay metrology. The main goal of this work is to improve overlay measurement accuracy. Two main threads are developed to the work - novel in-chip overlay target design, and best algorithm. The former is hoped to prove a capability for measuring overlay error inside the active area of product devices. The later is for extracting the most from image detail.
  • Keywords
    coatings; measurement standards; nanolithography; CMS; Center for Measurement Standards; best algorithm; in-chip overlay target design; lithography; optical overlay metrology; overlay measurement accuracy; Area measurement; Circuit testing; Collision mitigation; Lithography; Measurement standards; Metrology; Nanotechnology; Optical films; Semiconductor device measurement; Yarn; bar-in-bar; in-chip; optical metrology; overlay; overlay mark;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-0607-4
  • Electronic_ISBN
    978-1-4244-0608-1
  • Type

    conf

  • DOI
    10.1109/NANO.2007.4601351
  • Filename
    4601351
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2607044