• DocumentCode
    2607055
  • Title

    Engineering wafers for the nanotechnology era

  • Author

    Mazuré, Carlos ; Auberton-Hervé, André-Jacques

  • Author_Institution
    SOITEC, Crolles, France
  • fYear
    2005
  • fDate
    12-16 Sept. 2005
  • Firstpage
    29
  • Lastpage
    38
  • Abstract
    Nanotechnology starts at the substrate level. Engineered substrates are one of the most important innovations of the nanotechnology era driven by the vanishing boundary between substrate design and device architecture. SOI substrates, the first engineered substrate of its kind, have made possible an efficient optimization of MOSFET current drive while minimizing the leakage and reducing parasitic elements, thus enhancing the overall IC performance. Strained silicon, hybrid orientation SOI, and germanium on insulator have all added new handles to traditional scaling to further improve device and IC performance. An overview of the advances in Smart Cut engineered substrates and the impact on device performance is given.
  • Keywords
    MOSFET; elemental semiconductors; germanium; nanotechnology; semiconductor-insulator boundaries; silicon; silicon-on-insulator; substrates; system-on-chip; MOSFET current drive optimization; SOI substrates; Smart Cut substrates; device architecture; germanium on insulator; hybrid orientation SOI; leakage minimization; nanotechnology; parasitic element reduction; strained silicon; substrate design; Capacitive sensors; FinFETs; Impedance; Logic devices; MOSFET circuits; Nanotechnology; Power engineering and energy; Radio frequency; Silicon on insulator technology; Technological innovation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
  • Print_ISBN
    0-7803-9203-5
  • Type

    conf

  • DOI
    10.1109/ESSDER.2005.1546579
  • Filename
    1546579