DocumentCode
2607055
Title
Engineering wafers for the nanotechnology era
Author
Mazuré, Carlos ; Auberton-Hervé, André-Jacques
Author_Institution
SOITEC, Crolles, France
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
29
Lastpage
38
Abstract
Nanotechnology starts at the substrate level. Engineered substrates are one of the most important innovations of the nanotechnology era driven by the vanishing boundary between substrate design and device architecture. SOI substrates, the first engineered substrate of its kind, have made possible an efficient optimization of MOSFET current drive while minimizing the leakage and reducing parasitic elements, thus enhancing the overall IC performance. Strained silicon, hybrid orientation SOI, and germanium on insulator have all added new handles to traditional scaling to further improve device and IC performance. An overview of the advances in Smart Cut engineered substrates and the impact on device performance is given.
Keywords
MOSFET; elemental semiconductors; germanium; nanotechnology; semiconductor-insulator boundaries; silicon; silicon-on-insulator; substrates; system-on-chip; MOSFET current drive optimization; SOI substrates; Smart Cut substrates; device architecture; germanium on insulator; hybrid orientation SOI; leakage minimization; nanotechnology; parasitic element reduction; strained silicon; substrate design; Capacitive sensors; FinFETs; Impedance; Logic devices; MOSFET circuits; Nanotechnology; Power engineering and energy; Radio frequency; Silicon on insulator technology; Technological innovation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546579
Filename
1546579
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