DocumentCode
2607085
Title
Voltage Breakdown Characteristics of Close Spaced Aluminum Arc Gap Structures on Oxidized Silicon
Author
Hickernell, F.S. ; Crawford, J.J.
Author_Institution
Motorola Government Electronics Division, Scottsdale, Arizona 85252
fYear
1977
fDate
28216
Firstpage
128
Lastpage
131
Abstract
The pulsed dc voltage breakdown characteristics of passivated and unpassivated parallel planar aluminum arc gap structures on oxidized silicon, with metal to metal spacings from 0.1 to 1.6 mils, were investigated. The arc breakdown and oxide rupture voltage dependencies, characteristics of breakdown, nonproductive failure modes and applicability for MOS-LSI circuit protection were investigated. Unpassivated arc structures with gap spacings from 0.4 to 1.6 mils, having breakdown voltages in the 225 volt region, would be recommended for protection of MOS-LSI circuits.
Keywords
Aluminum; Breakdown voltage; Circuits; Dielectric breakdown; Electric breakdown; Electrodes; Passivation; Protection; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1977. 15th Annual
Conference_Location
LAs Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1977.362783
Filename
4208170
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