• DocumentCode
    2607127
  • Title

    Effects of Electrostatic Discharge on Linear Bipolar Integrated Circuits

  • Author

    Minear, R.L. ; Dodson, G.A.

  • Author_Institution
    Bell Telephone Laboratories, Reading, Pennsylvania 19604, (215) 929-7575. (215) 929-7385
  • fYear
    1977
  • fDate
    28216
  • Firstpage
    138
  • Lastpage
    143
  • Abstract
    Electrostatic discharge (ESD) can easily damage bipolar integrated circuits. "Second breakdown" of NPN transistor emitter-base Junctions is a common failure mode. No external emitter connection is needed for this to occur. ESD current paths, physics of ESD failure, and design concepts for improved ESD resistance are discussed.
  • Keywords
    Biological system modeling; Bipolar integrated circuits; Capacitors; Circuit simulation; Degradation; Electric breakdown; Electrostatic discharge; Lead; Pulse measurements; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1977. 15th Annual
  • Conference_Location
    LAs Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1977.362785
  • Filename
    4208172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2607127