Title :
Two-dimensional electron gas (2DEG) IDT SAW devices on AlGaN/GaN heterostructure
Author :
Wong, King-Yuen ; Tang, Wilson ; Lau, Kei May ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
Surface acoustic wave (SAW) devices using two-dimensional electron gas (2DEG) as interdigital transducers (IDTs) on AlGaN/GaN heterostructure has been demonstrated using a planar isolation technique based on the fluoride-based (CF4) plasma treatment technique. The RF characteristics of the SAW filters with planar 2DEG IDTs are compared with SAW devices that are made of metal IDTs or hybrid metal/2DEG IDTs.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; interdigital transducers; plasma materials processing; semiconductor heterojunctions; surface acoustic wave filters; two-dimensional electron gas; wide band gap semiconductors; AlGaN-GaN; SAW filters; fluoride-based plasma treatment; heterostructure; interdigital transducers; planar isolation; surface acoustic wave devices; two-dimensional electron gas IDT SAW devices; Acoustic transducers; Acoustic waves; Aluminum gallium nitride; Electrons; Gallium nitride; Plasma devices; Plasma properties; Surface acoustic wave devices; Surface acoustic waves; Surface treatment; AlGaN/GaN and fluoride-based plasma treatment; Surface acoustic wave; two-dimensional electron gas;
Conference_Titel :
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-0607-4
Electronic_ISBN :
978-1-4244-0608-1
DOI :
10.1109/NANO.2007.4601361
