Title :
Evidence for reduction of noise and radiation effects in G4-FET depletion-all-around operation
Author :
Akarvardar, K. ; Cristoloveanu, S. ; Dufrene, B. ; Gentil, P. ; Schrimpf, R.D. ; Blalock, B.J. ; Chroboczek, J.A. ; Mojarradi, M.
Author_Institution :
IMEP, Grenoble, France
Abstract :
The low noise and radiation-hard operation of the SOI four-gate transistor (G4-FET) is experimentally demonstrated. When operated in depletion-all-around (DAA) mode, the G4-FET drain current flows in the middle of the silicon film, far from the interfaces. The influence of oxide and interface traps on the conduction channel is suppressed by biasing the front and back gates in depletion or, even better, in inversion. Systematic data show a significant reduction of low-frequency noise as well as a quasi-insensitivity to total-dose radiation effects, up to 10 Mrad. These features come along with superior static characteristics in DAA mode and are attractive for G4-FET-based analog circuits.
Keywords :
MOSFET; elemental semiconductors; junction gate field effect transistors; radiation effects; semiconductor device noise; silicon; silicon-on-insulator; G4-FET depletion; G4-FET-based analog circuits; SOI four-gate transistor; Si; conduction channel; depletion-all-around mode; drain current; interface traps; low-frequency noise reduction; radiation-hard operation; silicon film; total-dose radiation effects; Aerospace electronics; CMOS technology; JFETs; Laboratories; MOSFETs; Noise reduction; Propulsion; Radiation effects; Silicon; Transconductance;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546592
