DocumentCode :
2607319
Title :
Tunneling and intersubband coupling in ultra-thin body double-gate MOSFETs
Author :
Sverdlov, Viktor ; Gehring, Andreas ; Kosina, Hans ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., TU Vienna, Austria
fYear :
2005
fDate :
12-16 Sept. 2005
Firstpage :
93
Lastpage :
96
Abstract :
Deca-nanometer double-gate MOSFETs is studied using a quantum Wigner Monte Carlo approach, including electron-phonon scattering. Intersubband coupling elements are explicitly calculated and proven to be small in doublegate MOSFETs. This allows quantum transport simulations to be analyzed using decoupled subbands. For long gate length the semi-classical result is recovered. An increasing tunneling component of the drain current with decreasing gate length is obtained. The results clearly show the importance of scattering for gate lengths as short as 25 nm. Performance enhancement due to ballistic transport can thereby be estimated.
Keywords :
MOSFET; Monte Carlo methods; ballistic transport; electron-phonon interactions; semiconductor device models; tunnelling; 25 nm; ballistic transport; deca-nanometer double-gate MOSFET; drain current; electron-phonon scattering; gate length; intersubband coupling; quantum Wigner Monte Carlo approach; quantum transport simulations; tunneling process; ultra-thin body double-gate MOSFET; Analytical models; Ballistic transport; Boltzmann equation; FETs; MOSFETs; Microelectronics; Monte Carlo methods; Particle scattering; Quantum mechanics; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
Type :
conf
DOI :
10.1109/ESSDER.2005.1546593
Filename :
1546593
Link To Document :
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