DocumentCode :
2607338
Title :
Germanium/HfO2/TiN gate stacks for advanced nodes: influence of surface preparation on MOS capacitor characteristics
Author :
Le Royer, C. ; Garros, X. ; Tabone, C. ; Clavelier, L. ; Morand, Y. ; Hartmann, J.-M. ; Campidelli, Y. ; Kermarrec, O. ; Loup, V. ; Martinez, E. ; Renault, O. ; Guigues, B. ; Cosnier, V. ; Deleonibus, S.
Author_Institution :
CEA-LETI, Grenoble, France
fYear :
2005
fDate :
12-16 Sept. 2005
Firstpage :
97
Lastpage :
100
Abstract :
For the first time, we report electrical and physical characterization of metal-oxide-semiconductor (MOS) capacitors fabricated on 2.5μm epitaxial germanium layers grown on (100) silicon. These capacitors were made using HfO2 as the dielectric and TiN as the metal gate electrode. We have studied the influence of the Ge surface preparation on the MOS electrical characteristics. It is demonstrated that a surface anneal step in a NH3 ambient before the HfO2 deposition results in significant improvements in both the equivalent oxide thickness (EOT) and the gate leakage current. We show that it is possible to achieve Ge/GeON/HfO2/TiN gate stacks with an EOT of 0.7 nm and a leakage current of 0.84 A/cm2 at -2 V gate bias. The better transport properties of Ge and these performances show the interest of Ge and GeOI for the ITRS advanced nodes.
Keywords :
Ge-Si alloys; MOS capacitors; dielectric thin films; epitaxial growth; germanium; germanium compounds; hafnium compounds; leakage currents; semiconductor epitaxial layers; titanium compounds; -2 V; 0.7 nm; 2.5 micron; Ge; Ge-GeON-HfO2-TiN; Ge/GeON/HfO2/TiN gate stacks; HfO2; ITRS advanced nodes; MOS capacitor characteristics; MOS electrical characteristics; Metal-Oxide-Semiconductor capacitors; NH3; SiGe; TiN; dielectric; electrical characterization; epitaxial Germanium layers grown; equivalent oxide thickness; gate leakage current; germanium/HfO2/TiN gate stacks; metal gate electrode; physical characterization; surface preparation; Annealing; Dielectrics; Electric variables; Electrodes; Germanium; Hafnium oxide; Leakage current; MOS capacitors; Silicon; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
Type :
conf
DOI :
10.1109/ESSDER.2005.1546594
Filename :
1546594
Link To Document :
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