The effect of metal thickness, overlayer and high-k surface treatment on the effective work function of metal electrode

Author

Choi, K. ; Wen, H.-C. ; Alshareef, H. ; Harris, Roy ; Lysaght, P. ; Luan, H. ; Majhi, P. ; Lee, B.H.

Author_Institution

Sematech, Austin, TX, USA

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

101

Lastpage

104

Abstract

We demonstrate that the effective work function (EWF) of atomic layer deposited (ALD) TiN electrodes is a function of the TiN film thickness and that the metal/dielectric interface and the bulk metal film influence this measured response. It is shown that anneal treatments and chemical processing of the underlying dielectric surface prior to electrode deposition may be exploited to modify the effective work function of metal electrodes. The effect of physical vapor deposited (PVD) and ALD metal overlayers on the effective work function of metal electrodes is also presented.

Keywords

annealing; atomic layer deposition; electrodes; high-k dielectric thin films; metallic thin films; surface treatment; titanium compounds; work function; ALD metal overlayers; TiN; anneal treatment; atomic layer deposition; bulk metal film; chemical processing; dielectric interface; dielectric surface; effective work function; electrode deposition; high-k surface treatment; metal electrodes; metal interface; metal thickness; physical vapor deposition; Annealing; Atomic layer deposition; Atomic measurements; Dielectric measurements; Electrodes; High K dielectric materials; High-K gate dielectrics; Surface treatment; Thickness measurement; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546595

Filename

1546595