DocumentCode :
2607367
Title :
Failure Analysis of Thin-Film Conductors Stressed with High Current Density by Application of Mattehiessen´s Rule
Author :
Fischer, F. ; Fellinger, J.
Author_Institution :
Siemens AG, Zentralbereich Technik, Mÿnchen, W.Germany
fYear :
1977
fDate :
28216
Firstpage :
250
Lastpage :
256
Abstract :
The analysis of failure mechanism due to electromigration requires precise knowledge of the resistivities and theit time dependences as a function of current density and stripe temperature. This is possible with the aid of Matthiessen´s rule. The results show a different behaviour in the changes of the residual resistivities PR and the crose-sectional areas A for pure Al and Al-Cu samples.
Keywords :
Conductive films; Conductivity; Current density; Electromigration; Failure analysis; Inorganic materials; Large scale integration; Semiconductor materials; Temperature dependence; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1977. 15th Annual
Conference_Location :
LAs Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1977.362801
Filename :
4208188
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2607367
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