• DocumentCode
    2607389
  • Title

    The Reaction of AL with Vitreous Silica

  • Author

    Black, James R.

  • Author_Institution
    Motorola Inc., M.D. A112, Semiconductor Products Division, 5005 E. McDowell Road, Phoenix, Arizona 85008. (602) 244-6201
  • fYear
    1977
  • fDate
    28216
  • Firstpage
    257
  • Lastpage
    261
  • Abstract
    The solid state chemical reaction between aluminum films and vitreous silicon dioxide substrates is reported. This reaction where aluminum reduces silicon dioxide to form elemental silicon and aluminum oxide is extensively used in the semiconductor industry to remove native SiO2 thin layers at ohmic contacts and to promote adhesion of aluminum to silica. Sorbed water vapor on silica is shown to interfere with the reaction reducing the adherence of aluminum to silica. The rate of penetration of the reaction into silicon dioxide was found to follow an Arrhenius relationship with an activation energy of 2.562 eV.
  • Keywords
    Aluminum; Electronics industry; Glass; Interference; Ohmic contacts; Semiconductor films; Silicon compounds; Solid state circuits; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1977. 15th Annual
  • Conference_Location
    LAs Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1977.362802
  • Filename
    4208189