Title :
Plasma doping for S/D extensions: device integration, gate oxide reliability and dynamic behavior
Author :
Dumont, Benjamin ; Pouydebasque, Arnaud ; Lallement, Fabrice ; Lenoble, Damien ; Ribes, Guillaume ; Roux, Julien-Marc ; Vanbergue, Sebastien ; Skotnicki, Thomas
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
We present in this paper electrical results where the ultra low energy (ULE) implantation is replaced by plasma doping (PLAD) process for the source/drain extensions (SDE) for both PMOS and NMOS devices. We show good Ion/Ioff performances (730μA/μm/320μA/μm at Ioff -100nA/μm) on isolated transistors especially with a gain for NMOS devices and we discuss on the improvement of several "secondary" parameters like SDE resistance or junction leakage. Secondly, gate oxide reliability electrical tests show that PLAD does not damage gate oxide integrity. Finally we demonstrate the improvement of dynamic performance using PLAD through RO measurement.
Keywords :
MOSFET; nanoelectronics; semiconductor device reliability; semiconductor doping; NMOS devices; PMOS devices; SDE resistance; device integration; gate oxide reliability; isolated transistors; junction leakage; plasma doping process; ultra low energy implantation; Annealing; Doping; Integrated circuit reliability; MOS devices; Performance gain; Plasma devices; Plasma sources; Ring oscillators; Semiconductor device reliability; Temperature;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546598
