DocumentCode
2607398
Title
High-performance varactor diodes integrated in a silicon-on-glass technology
Author
Buisman, K. ; Nanver, L.K. ; Scholtes, T.L.M. ; Schellevis, H. ; de Vreede, L.C.N.
Author_Institution
HiTec, Delft, Netherlands
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
117
Lastpage
120
Abstract
High-performance low-loss boron-passivated Schottky varactor diodes have been fabricated in a silicon-on-glass substrate transfer technology, using laser-annealed back-wafer contacts and copper-plated aluminum. The diodes have well-defined doping profiles predetermined by the circuit application and high quality factors ranging typically from 100 till 300 at 2 GHz.
Keywords
Q-factor; Schottky diodes; aluminium; boron; coating techniques; copper; doping profiles; glass; ohmic contacts; passivation; silicon; silicon-on-insulator; substrates; varactors; 2 GHz; B; Schottky varactor diodes; copper-plated aluminum; doping profiles; laser-annealed back-wafer contacts; passivation; silicon-on-glass technology; substrate transfer technology; Capacitance-voltage characteristics; Contact resistance; Doping profiles; Integrated circuit technology; Linearity; Optical device fabrication; Radio frequency; Schottky diodes; Silicon; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546599
Filename
1546599
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