Dynamic analysis of wirebonding process on Cu/low-K wafers

Author

Yeh, Chang-Lin ; Lai, Yi-Shao ; Wu, Jenq-Dah

Author_Institution

Stress Characterization Lab., Adv. Semicond. Eng., Inc., Kaohsiung, Taiwan

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

282

Lastpage

286

Abstract

Comprehensive dynamic analyses were performed in this paper to simulate wirebonding on Cu/low-K wafers, which involves both the impact and the ultrasonic vibration stages. After the impact stage, the contact region between the pad and the gold ball was welded to allow subsequent ultrasonic vibrations to take place. Parametric studies were carried out to investigate structural responses of the Cu/low-K layer due to variation of the moduli of Cu/low-K components.

Keywords

copper; finite element analysis; integrated circuit interconnections; integrated circuit packaging; internal stresses; lead bonding; semiconductor process modelling; ultrasonic bonding; Cu; Cu/low-k wafers; VLSI interconnects; contact region; copper interconnects; dynamic analyses; explicit time integration scheme; finite element analysis; impact stage; low permittivity intermetal dielectric; nonlinear transient behavior; stress distributions; structural responses; ultrasonic vibration stage; wire bonding; Capacitive sensors; Copper; Electronics packaging; Finite element methods; Geometry; Gold; Material properties; Numerical analysis; Passivation; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology, 2003 5th Conference (EPTC 2003)

Print_ISBN

0-7803-8205-6

Type

conf

DOI

10.1109/EPTC.2003.1271529

Filename

1271529