Investigation of PECVD SiC nano film

Author

Chen, Zhe ; Tian, Dayu ; Zhang, Guobing ; Zhang, Haixia

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

1089

Lastpage

1092

Abstract

PECVD SiC nano thin films have been investigated. The element component was controlled by gas resources and residual stress was controlled by furnace annealing. The results of XRD, HRTEM measured show formation of SiC nano crystalline structure through a structure re-ordering by laser annealing, and the performance of PECVD SiC film is ameliorated with the nano crystalline. The nanoindentation test shows the SiC´s hardness and Youngiquests modulus has been improved. The resistant of SiC thin films has been reduced effectively by in-situ doped together with laser annealing.

Keywords

X-ray diffraction; Young´s modulus; hardness; indentation; internal stresses; laser beam annealing; nanostructured materials; nanotechnology; plasma CVD; semiconductor growth; silicon compounds; transmission electron microscopy; wide band gap semiconductors; HRTEM; PECVD; SiC; XRD; Young´s modulus; furnace annealing; gas resources; hardness; laser annealing; nanocrystalline structure; nanofilm; nanoindentation; residual stress; structure reordering; Annealing; Crystallization; Furnaces; Gas lasers; Residual stresses; Silicon carbide; Stress control; Testing; Transistors; X-ray scattering; PECVD; SiC; laser annealing; nano film;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601373

Filename

4601373