Title :
Quantum short-channel compact modeling of drain-current in double-gate MOSFET
Author :
Munteanu, Daniela ; Autran, Jean-Luc ; Loussier, Xavier ; Harrison, Samuel ; Cerutti, Robin ; Skotnicki, Thomas
Author_Institution :
CNRS, Marseille, France
Abstract :
A continuous compact model for the drain current, including short-channel effects and carrier quantization in double-gate MOSFET is developed. The model is particularly well-adapted to ultra-scaled devices, with short channel lengths and ultra-thin silicon films. An extensive comparison step with 2D quantum numerical results fully validates the model. Finally, the model is shown to reproduce with an excellent accuracy experimental drain current in double-gate devices.
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; semiconductor thin films; silicon; Si; carrier quantization; continuous compact model; double gate MOSFET; drain current model; quantum short-channel compact modeling; short channel effects; short channel lengths; ultra scaled devices; ultra thin silicon films; Circuit simulation; Electrostatics; MOSFET circuits; Physics; Quantization; Quantum mechanics; Semiconductor films; Silicon; Thin film circuits; Thin film devices;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546604
