DocumentCode
2607491
Title
Silicon-based 2D slab nano photonic crystal TM polarizer in telecommunication wavelength
Author
Cui, Yonghao ; Wu, Qi ; Schonbrun, Ethan ; Tinker, Mark ; Lee, J.-B. ; Park, Won
Author_Institution
Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX
fYear
2007
fDate
2-5 Aug. 2007
Firstpage
1093
Lastpage
1096
Abstract
We report an extremely compact (15.4 mum x 8 mum) silicon-based 2D slab nano photonic crystal transverse magnetic (TM) polarizer which blocks propagation of the transverse electric (TE) polarized light around telecommunication wavelength (1,550 nm). TM polarization occurs in a length of mere 4.9 mum and it has a great potential to be integrated in a complex photonic integrated circuits. To our knowledge, this is the first ever demonstration of silicon-based TM polarizer in telecommunication wavelength. 2D and 3D finite difference time domain (FDTD) simulation was utilized to design a triangular array of air holes in silicon. Such photonic crystal TM polarizer was fabricated in silicon-on-insulator wafer using focused ion beam and reactive ion etch with air hole diameter of 170 nm and pitch distance of 347 nm for the TM polarizer and 371 nm for the input and output waveguide. The device was fully characterized using tunable lasers in the wavelength range of 1,528 nm ~ 1,604 nm. Transmitted light intensities of the TE and TM polarized lights were measured which clearly showed the TE polarized light is filtered out around 1.55 mum wavelength.
Keywords
finite difference time-domain analysis; light polarisation; nanostructured materials; photonic crystals; silicon; sputter etching; 2D slab nanophotonic crystal; air holes; distance 4.9 mum; finite difference time domain simulation; focused ion beam etch; radius 85 nm; reactive ion etch; silicon-on-insulator wafer; telecommunication wavelength; transverse magnetic polarizer; wavelength 1550 nm; Circuit simulation; Finite difference methods; Optical polarization; Optical propagation; Photonic crystals; Photonic integrated circuits; Silicon; Slabs; Tellurium; Time domain analysis; FDTD; photonic crystal; polarizer; silicon; siliconon-insulator; telecommunication;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-0607-4
Electronic_ISBN
978-1-4244-0608-1
Type
conf
DOI
10.1109/NANO.2007.4601374
Filename
4601374
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