DocumentCode
2607505
Title
Reliability Evaluation Program and Results for a 4K Dynamic RAM
Author
Batdorf, H.A. ; Hensler, D.H. ; Wasson, R.D.
Author_Institution
Bell Telephone Laboratories, Incorporated, Allentown, Pennylvania 18103
fYear
1978
fDate
28581
Firstpage
14
Lastpage
18
Abstract
A comprehensive reliability evaluation program for an n-channel silicon gate 4K dynamic RAM is described. The program included dynamic high-temperature accelerated aging for various time periods followed by thorough electrical testing. Results including failure mechanism descriptions, acceleration factors, and projected failure rates during system use are included. Actual failure rate during system use is under 100 FITs after less than one year of operation.
Keywords
Accelerated aging; Acceleration; DRAM chips; Electronic switching systems; Failure analysis; Laboratories; Manufacturing processes; Qualifications; Silicon; System testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1978. 16th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1978.362811
Filename
4208201
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