Effect of passivation on frit glass bonding method for wafer level hermetic sealing on MEMS devices

Author

Chong, Ser Choong ; Zhang, XiaoLin ; Mohanraj, S. ; Premachandran, Cs ; Ranganathan, Nagarajan

Author_Institution

Inst. of Microelectron., Singapore, Singapore

fYear

2003

fDate

10-12 Dec. 2003

Firstpage

307

Lastpage

310

Abstract

A wafer level hermetic package has been developed for micro-electronics mechanical system (MEMS) applications by wafer to wafer bonding method. A cap wafer, glass or silicon wafers was used on top of the MEMS device to protect the MEMS device during the assembly process. Frit glass paste is patterned on the cap wafer and is used as the intermediate layer for wafer bonding. The adhesion and reliability of frit glass bonding have been studied with different passivation materials, silicon oxide and silicon nitride. Verification of bonding quality was done by shear test, water test for the gross leak, fine leak test, and an X-ray technique for voids inspection. Compatibility of the frit glass on oxide passivation can be improved with an additional annealing step before frit glass deposition.

Keywords

adhesion; annealing; hermetic seals; micromechanical devices; passivation; wafer bonding; MEMS assembly process; MEMS devices; Si; SiN; SiO₂; X-ray void inspection; adhesion; annealing; bonding quality; cap wafer; fine leak test; frit glass bonding method; frit glass paste; micro-electronics mechanical systems; passivation materials; shear test; wafer bonding; wafer level hermetic package; wafer level hermetic sealing; water test; Glass; Mechanical systems; Microelectromechanical devices; Micromechanical devices; Packaging; Passivation; Silicon; Testing; Wafer bonding; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology, 2003 5th Conference (EPTC 2003)

Print_ISBN

0-7803-8205-6

Type

conf

DOI

10.1109/EPTC.2003.1271535

Filename

1271535