• DocumentCode
    2607590
  • Title

    Trade-off between electron velocity and density of states in ballistic nano-MOSFETs

  • Author

    De Michielis, M. ; Esseni, D. ; Driussi, F.

  • Author_Institution
    DIEGM, Udine, Italy
  • fYear
    2005
  • fDate
    12-16 Sept. 2005
  • Firstpage
    165
  • Lastpage
    168
  • Abstract
    This paper presents an analytical model for the on-current (ION) of ballistic MOSFETs that points out how the reduction of the in-plane masses implies a trade-off between the increase of the electron velocity and the reduction of the 2D density of states (D2D). Numerical simulations confirm the analytical results and demonstrate that the ION is deteriorated for materials with a very small D2D.
  • Keywords
    MOSFET; ballistic transport; electronic density of states; nanoelectronics; semiconductor device models; MOSFET on-current; ballistic nano-MOSFET device; density of states; electron velocity; Analytical models; Ballistic transport; Capacitance; Effective mass; Electronic switching systems; Electrons; Intrusion detection; MOSFETs; Numerical simulation; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
  • Print_ISBN
    0-7803-9203-5
  • Type

    conf

  • DOI
    10.1109/ESSDER.2005.1546611
  • Filename
    1546611
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2607590