DocumentCode
2607641
Title
Modeling and simulation of footing effect in DRIE process
Author
Wang, Yisong ; Guo, Yunxia ; Zhang, Haixia
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing
fYear
2007
fDate
2-5 Aug. 2007
Firstpage
1135
Lastpage
1138
Abstract
In this paper, the footing effect of DRIE process is studied and simulated. Based on the charging mechanism of the footing effect, local electric field and ion deflexion caused by the charging is very important for the precise simulation of the footing effect. Thus, we first modeled and numerically simulated the charging effect to calculate the local electric field and deflexed ions, and then couple the numerical simulation results to the DROPIE to emulate the footing profile evolution. Finally the footing effect has been simulated successfully and compared with experimental results, they agree each other very well.
Keywords
micromechanical devices; sputter etching; surface charging; DRIE; charging; footing effect; ion deflexion; local electric field; Computational modeling; Electrons; Etching; Fabrication; Glass; Micromechanical devices; Numerical models; Numerical simulation; Quantum computing; Silicon on insulator technology; MEMS/NEMS integration; Molecular and Quantum computing; modeling and simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-0607-4
Electronic_ISBN
978-1-4244-0608-1
Type
conf
DOI
10.1109/NANO.2007.4601383
Filename
4601383
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